| 摘要 |
PURPOSE:To efficiently inject excited carriers to wells from the impurity at the center of a barrier layer and prevent the carriers from leaking out of the wells by providing the quantum well structure formed of the barrier layer, which has distortion layers that generate internal electric field by piezoelectric effect, and the well layer. CONSTITUTION:An optical semiconductor device comprises a quantum well structure formed of a barrier layer 2, which has distortion layers 3 and 4 that generate internal electric field by piezoelectric effect on at least one part, and a well layer 1. The distortion layers 3 and 4 formed at least on one part of the barrier layer 2 of the quantum well structure form an inclined plane at least for one quantum well, carrier leakage from the quantum well is suppressed by the inclined plane and the increase of threshold current is suppressed. Since the distortion layers 3 and 4 formed between the well layers 1 of the multi quantum well structure successively reduce the potentials of the preceding wells in the moving direction of the carriers, carrier supply to the wells is uniformized and recombining efficiency is improved. |
