| 摘要 |
PURPOSE:To selectively form a high-resistance areas on the surface of II-VI or III-V compound semiconductor by a simple process. CONSTITUTION:The manufacture of a compound semiconductor device has a process of demarcating a high-resistance area 3 and providing a mask 2 which absorbs group II or III elements, which form the compound semiconductor, at the time of heat treatment on the surface of semiconductor 4, and a process of heattreating the semiconductor 4 in the atmosphere that contains group If or III elements and selectively forming the high-resistance area 3 directly under the mask 2 of the semiconductor 4 by the external diffusion of such elements in the semiconductor 4. |
