| 摘要 |
PURPOSE:To increase the etching rate of platinum for increasing the throughput of the manufacturing equipment. CONSTITUTION:A platinum film 1 for upper electrode or another platinum film 3 for lower electrode respectively comprising the upper electrode 1a and the lower electrode 3a are covered with resist films 5, 6 and then a compound of platinum and sulphur is produced on the parts not covered with the resist films 5, 6 using a mixed gas of e.g. S2Cl2, SH6, S2F2, Cl2 and S2Cl2 or another mixed gas of HBr and H2S or SO2. Otherwise, sulphur is implanted into the regions of the platinum films 1, 3 to be etched away by ion implantation and after the formation of the compound of sulphur and platinum, these regions are dryetched away. |
