| 摘要 |
PURPOSE:To facilitate the selective growing step of a semiconductor on a transparent conductive film in a method of manufacturing semiconductor device including the semiconductor selective growth step on the transparent conductive film. CONSTITUTION:The manufacturing method of semiconductor device is composed of the three steps as follows, i.e., the first step of forming a conductive film comprising a metal, a metallic oxide or an intermetallic compound on an insulating film 1, the second step of forming a growing neucleus layer 5 containing either one element out of group IIIb, group IVb, group Vb and group VIIb neither comprising the conductive film 3 nor the insulating film 1 and the third step of selectively growing a semiconductor 6 on the growing neucleus layer 5. |
