| 摘要 |
<p>PURPOSE:To omit a special stopper layer in etching and to simplify photo- process steps by providing ohmic contact for a transparent conductor film, which is to become a pixel electrode, and a semiconduct layer, and providing selectivity in etching. CONSTITUTION:On an insulating substrate 1, a gate electrode 2, a gate insulating film 3 and a semiconductor film 4 are sequentially laminated. A source electrode 5 and a drain electrode 6 are formed of a transparent conductor film, which is to become a pixel electrode including impurities for the semiconductor.</p> |
