| 摘要 |
<p>PURPOSE:To selectively change only a magnetizing direction of a first magnetic material layer by inducing an exchange interaction between both the first layer and a second magnetic material layer having larger coercive force than that of the first layer for a laminated film having the first and second layers and a semiconductor layer interposed between both the first and second layers by a light emission. CONSTITUTION:A magnetic material layer 3 of a laminated unit 4 in which a magnetic material layer 2 and the layer 3 are laminated via a semiconductor layer 1 has higher coercive force than that of the layer 2, and an inversion of a magnetic spin scarcely occurs. Both the layers 2, 3 are formed as surface perpendicular magnetization films, no magnetic interaction exists between both the layers 2 and 3, and magnetic spins are aligned upward. When a light hmu corresponding to a band gap of the semiconductor layer is applied to this laminate 4, an exchange interaction is excited between the layers 2 and 3, an antiferro-magnetic coupling occurs, and the spin of the layer 2 is inverted. Thus, the magnetizing direction of a specific magnetic layer can be controlled, and record information can be held even after a light emission.</p> |
