Method of preparing polycrystalline silicon film

摘要

Disclosed herein is a method of preparing a polycrystalline silicon film comprising a step of forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and a step of heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film.