| 摘要 |
<p>PURPOSE:To prevent defects in lines and decrease in the numerical aperture by forming a gate bus line and a common data bus line on each individual substrate. CONSTITUTION:On a TFT substrate 100, amorphous silicon (a-Si or amorphous silicon hydroxide exporessed also by a-Si:H) thin film transistor elements TFT1 which are MOS transistors and gate bus lines 2 are formed, while common data bus lines 3 which are used as both of data bus lines and common bus lines are formed on the counter substrate 200. The common data bus line 3 also acts as a display electrode, and is formed as a transparent electrode comprising a conductive material having high transmittance for visible rays, preferably, such as ITO (indium tin lead) and tin oxide. The drain 6 and the source 7 of the TFT1 are disposed in opposite to the respective common data bus lines 3 with liquid crystal electrodes 8 interposed so that the element has two display electrodes. Thus, one TFT is provided with a pair of display electrodes.</p> |
