| 摘要 |
PURPOSE:To form a clean InP wafer surface having neither residual particles nor flaws at all by a method wherein a mixed solution of hydrobromic acid, glycerin and water is used as a polishing solution in the mirror polishing step of wafer so as to make the wafer surface after the final polishing step hydrophilic while reducing the mechanical friction between the wafer and a polishing cloth in the polishing step. CONSTITUTION:A mixed solution of hydrobromic acid, glycerin and water is used as a polishing solution in the mirror polishing step of compound semiconductor wafer. For example, an InP wafer stuck on a bonding plate by wax is pressure-welded into a polishing cloth sticked on a spin disc to be single-face polished while dripping a bromine-methanol mixed solution as a polishing solution. Next, the InP wafer is ultrasonic cleaned up while agitating it for five munutes respectively in methylene chloride, organic alkalic base interfacial activator and water. Successively, the InP wafer is polished with a waxless pad in the final polishing solution in the composition of hydrobromic acid 1, glycerin 40 and water 80 to be dried up after ultrasonic cleaning step while agitating it for five minutes in running water. |
