| 摘要 |
PURPOSE:To provide a phase shift mask with which a pattern can be formed equal to designed value on a resist material on a wafer. CONSTITUTION:The phase shift mask consists of a first transmitting area 20, second transmitting area 22 which transmits light of a different phase from the phase of light transmitting through the first transmitting area 20, and light shielding area 12 provided between the fist transmitting area and the second transmitting area. When the width of the first and second transmitting area 20, 22 aredefined Wt, and the width of the pattern formed on a resist material on a base body with light transmitted through the first and second transmitting area through a projecting optical system is defined Wp, and the reducing rate N of the projecting optical system satisfy the relation of Wt<WpXN. |
