| 摘要 |
PURPOSE:To obtain a light-emitting diode having a high radiant power output and easy to manufacture in spite of reflection type structure having a substrate. CONSTITUTION:A plurality of epitaxial layers 12 constituting a light-emitting section are connected spatially with a substrate 2 at the center by a sacrificing layer 3a for connection, and an air gap layer 9 is formed among the epitaxial layers 12 and the substrate 2. A resin may also be injected into the gap layer 9. The light-emitting diode chip 1 is manufactured in such a manner that an AlGaAs layer at a high mixed crystal ratio is grown thinly on the substrate 2 as a sacrificing layer, the epitaxial layers 12 are grown on the sacrificing layer, the sacrificing layer is dissolved and removed (the sacrificing layer section 3a for connection) while leaving a central section, and the gap layer 9 is formed. Light is reflected by the air gap layer 9 or the interface between the resin introduced into the gap layer 9 and a clad layer 4, thus improving the radiant power output. Since the substrate 2 is left, the thick-film AlGaAs layer at the high mixed crystal ratio for the substrate is unnecessitated, thus facilitating the manufacture, and uniforming the characteristics. |
