| 摘要 |
forming a bonding pad(2) and a protecting film(3) on a wafer(1), depositing a photoresist(7) over the surface, and selectively etching the photoresist(7); forming an adhesion layer(4), a main bonding layer(9) and an anti-oxidation layer(6) on the bonding pad(2), and removing the remained photoresist(7); and forming a solder paste layer(10) on the oxide preventing layer by dispersing the solder through a nozzle(11). The method can easily control bump size, and enhance productivity of bump. |
