发明名称 STRUCTURE OF CCD IMAGE SENSOR
摘要 The CCD image sensor having a P-typed well enclosing a floating defusion region and a sensing amplifier, is characterized in that the P-typed well independently encloses the only floating defusion region, and in that the independent P-typed well is connected to an outputting part of the sensing amplifier.
申请公布号 KR950009899(B1) 申请公布日期 1995.09.01
申请号 KR19920006202 申请日期 1992.04.14
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 KIM, YONG - KWAN
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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