| 摘要 |
The amorphous silicon layer (22) is doped with phosphorous to a doping level of 7x10E20 atoms/cubic cm twice that of the solid phase solubility of phosphorous. The layer is layed on top of an FET junction layout (1,2). Intermediate structure lays between the film are etched with HF, leaving the wing films exposed. A film of SiNx (29) 6nm thick is then formed. A layer of amorphous silicon (30) doped to 7x10E20 atoms/cubic cm 100nm thick and a BPSG layer (32) are then added. The connection opening (33) is then coated with aluminium, to form the electrode. |
