Semiconductor device e.g. IGBT

摘要

On the inner walls of the trough parts are formed insulating layers. The trough parts are filled with control electrode layers, sandwiching with the trough part inner walls the insulating layers. The control electrode layers are covered by insulating layer extending from the first main surface. Over the first main surface is formed a first main electrode, with the second one on the second main surface. A control voltage, applied to the control electrode layers, controls the current between the two main electrodes. The insulating layers have a slightly inclined surface from tip to bottom, meeting a specified formula related to the surface length and height.