Multilayer resist prodn. process

摘要

A multilayer resist pattern prodn. process involves (a) producing an alignment marking on a silicon substrate provided, on its surface, with a cell portion having several cell patterns with steps; (b) depositing a lower deposited film on the substrate and then applying a lower resist film which is exposed and developed to produce a secondary alignment marking; (c) producing an insulating interlayer over the lower resist film and then applying an upper resist film to produce a multilayer resist film; (d) exposing the upper resist film to form highly etchable and poorly etchable regions; (e) silylating the resulting structure to form a silylated layer on the upper resist film; (f) etching away the highly etchable region to produce an upper resist pattern and removing the silylated layer; (g) patterning the interlayer using the upper resist pattern as mask; and (h) etching the lower resist film, using the patterned interlayer as mask, to produce a multilayer resist pattern.