Semiconductor device having a planarized surface and method of manufacturing the same.

摘要

An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film (20) is formed on a semiconductor substrate (1) to cover a horizontally spreading convex pattern (83) and to fill in a concave portion (84). A portion of insulating film (20) located on a planarized portion of convex pattern (83) is selectively etched away so as to leave a frame-shaped insulating film (88) having a width of 1-500 mu m at least on the outer periphery portion of convex pattern (83). Insulating film (88) left on semiconductor substrate (1) is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.