Manufacture of quartz glass crucible for use in the manufacture of single crystal in silicon.

摘要

A quartz glass crucible for use in a process for pulling a single crystal silicon and having an outer layer (3) and an inner layer (4). The outer layer (3) contains less than 0.3 ppm each of Na, K and Li and more than 5 ppm of Al. The outer layer (3) further contains bubbles to present an opaque appearance. The inner layer (4) is made by melting powders of high purity non-crystalline synthetic silica and contains less then 200 ppm of OH group. There is also disclosed a method for producing the crucible.