MANUFACTURE OF DIELECTRIC THIN FILM FOR CHARGE STORAGE PART FOR SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To provide the manufacture of the dielectric thin film for the charge storage part for a semiconductor storage device so as to uniformize the nonuniformity of the composition distribution within the film due to the sputtering of dielectric insulating films such as PZT and PLZT that have a component which has high steam pressure and spattering rate such as Pb. CONSTITUTION:This films such as PZT and PLZT which have Pb as the component are formed by reactive sputtering and the dielectric thin film for the charge storage part for a semiconductor storage device is formed. An insulating material 11 is provided between the main body 1 and the substrate loading part 2 of a thin film forming device so as to insulate the substrate loading part 2 from the main body 1, a semiconductor wafer 5 whereupon an accumulation electrode is to be formed is set on the substrate loading part 2 by being insulated from the main body 1 of the thin film forming device, and the potential of the insulating film forming surface to the accumulation electrode is fixed for forming the thin film.