发明名称 |
Method of fabricating nonvolatile semiconductor memory device |
摘要 |
A method of fabricating a nonvolatile semiconductor memory device so as to improve interface properties between a tunneling oxide layer and a floating gate of the nonvolatile semiconductor memory device is disclosed, wherein the method comprises the steps of forming a tunneling oxide layer on a substrate, forming a floating gate consisting of a plurality of thin silicon layers which are formed through the repeated cyclical process under the low temperature of around 550 degrees C., forming an interposed insulating layer over a whole surface of the floating gate by a selective etching process of the silicon layers; and forming a control gate over a whole surface of the interposed insulating layer.
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申请公布号 |
US5445982(A) |
申请公布日期 |
1995.08.29 |
申请号 |
US19940214975 |
申请日期 |
1994.03.17 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
HWANG, HYUN S. |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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