Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

摘要

A semiconductor device is provided having a substrate which includes a floating circuit well with turn on/turn off signals generated by a voltage drop proximate to at least one resistor contained therein, and having high-voltage interconnects to connect the drain terminals of a plurality of LDMOS transistors to the resistor in the floating well and wherein the transistors, resistor and floating well are combined into an integrated structure which eliminates the high voltage interconnect crossovers.