发明名称 |
Cleaning of polycrystalline silicon for charging into a Czochralski growing process |
摘要 |
A process for cleaning organic contaminants from the surface of polycrystalline silicon. In the process, the surface of the polycrystalline silicon is exposed to an oxidizing medium which directly oxidizes the organic contaminant. The oxidized contaminants are then carried away from the polycrystalline silicon surface.
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申请公布号 |
US5445679(A) |
申请公布日期 |
1995.08.29 |
申请号 |
US19920996037 |
申请日期 |
1992.12.23 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
HANSEN, RICHARD L.;BANAN, MOHSEN |
分类号 |
B08B7/00;C30B15/00;(IPC1-7):B08B7/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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