摘要 |
PURPOSE:To provide a high-frequency inverter device stably operating with using no added high-speed diode or snubber circuit. CONSTITUTION:A variable reactance element jX is connected to the output side of a full bridge and a constant of this element is set to a value where a direction of a current through power MOS FET Q1 to Q4 of respective branches of the full bridge is reversed during the driving term of the power MOS FET Q1 to Q4 after a dead time. When setting is so made, the respective parasitic diodes D1 to D4 equivalently existing on the respective power MOS FET become to let a reversed recovery current flow during a driving term of the power MOSFET Q1 to Q4 to which the parasitic diodes belong so as to eliminate short circuit of a main current by the reversed recovery current of the parasitic diodes D1 to D4 thus allowing stable operation without using an outboard high-speed diode and a snubber circuit. |