| 摘要 |
PURPOSE:To obtain an effective means to avoid influence of the reflection between a resist film and a quartz substrate in the measuring method for the optical parameters A, B and C of the resist film required for the configurational simulation of a photoresist used when a circuit pattern is baked on a semiconductor sub strate in a semiconductor device manufacturing method. CONSTITUTION:In the measurement of an optical parameter used for conduction of configurational simulation of a resist film 3 by measuring the transmittivity of the resist film 3 on a transparent substrate 1 which changes with the exposing time, a reflection-decreasing film 6 is formed in advance between the transparent substrate 1 and the resist film 3. Also, the transparent substrate 1 is made of quartz, the refractive index of the reflection decreasing film 6 is set at 1.6 or 1.65, and the thickness of the reflection decreasing film 6 is set at the thickness corresponding to 1/4 of the wavelength of the exposing light. Besides, lanthanum fluoride is used as the maternal for the reflection decreasing film 6. |
