Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)

摘要

Disclosed is a thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR). A piezoelectric film is positioned between a first electrode and a second electrode and positioned adjacent a semiconductor substrate containing a via hole. A variable voltage source applies a DC bias voltage to the electrodes which causes an electric field to be created between the electrodes within the piezoelectric film. The resulting electric field causes the piezoelectric film to resonate at a frequency different than its unbiased resonant frequency. By adjusting the variable voltage source to change the DC bias voltage, the resonant frequency from the thin film semiconductor bulk acoustic resonator (SBAR) can be varied.