| 摘要 |
<p>PURPOSE:To provide an active matrix substrate with superior nondefective ratio, numerical aperture, and display definition. CONSTITUTION:The thickness of the wiring material of a connection part 30 between a wiring 13 for additional capacitance and an in-substrate short- circuited line 28 is formed thinly than that of a connection part 29 between a scanning wiring 12 and the in-substrate short-circuited line 28. The thickness of an anode oxide film on the wiring 12 for additional capacitance can be thinned as keeping the thickness of the anode oxide film on the scanning wiring 12 at the appropriate thickness in the current-voltage characteristic of a TFT by anode-oxidizing the scanning wiring 12 and the wiring 13 for additional capacitance. Therefore, it is possible to increase the capacitance per unit area of an electrode for additional capacitance and to increase additional capacitance without lowering the numerical aperture by increasing an electrode area.</p> |
