发明名称 |
Method for planarizing a semiconductor device having a amorphous layer |
摘要 |
To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
|
申请公布号 |
US5445996(A) |
申请公布日期 |
1995.08.29 |
申请号 |
US19930066375 |
申请日期 |
1993.05.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KODERA, MASAKO;YANO, HIROYUKI;SHIGETA, ATSUSHI;AOKI, RIICHIROU;YAJIMA, HIROMI;OKANO, HARUO |
分类号 |
B24B37/04;B24B49/00;B24B49/02;B24B49/04;B24B49/16;C09K3/14;H01L21/3105;H01L21/66;H01L21/768;(IPC1-7):H01L21/302;H01L21/463 |
主分类号 |
B24B37/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|