| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The semiconductor having a capacitor with a ferroelectrics film, consists of: a number of lower electrodes separated into each of a plurality of cell units; a low dielectric material filling a space between the lower electrodes; a thick ferroelectric film with which the lower electrodes are covered; and an upper electrode formed on the ferroelectric film.
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| 申请公布号 |
KR950009813(B1) |
申请公布日期 |
1995.08.28 |
| 申请号 |
KR19930000963 |
申请日期 |
1993.01.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, KI - WON;KANG, CHANG - SOK |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
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