MAKING METHOD OF HIGH SPEED TFT WITH THREE DIMENSIDNS CHANNEL STRUCTURE

摘要

forming a polysilicon layer by depositing the polysilicon on a transparent sustrate; forming a gate insulating layer by thermal oxidating the polysilicon layer; forming a channel region by depositing a polysilicon on a whole surface and removing the polysilicon film and the gate insulating layer exclusive of trench region; forming an insulation film to surround the channel region by thermal oxidating the channel region; and forming a gate to surround the channel region by depositing a polysilicon. The obtained transistor is useful for ULSI elements.