MANUFACTURIN METHOD OF SEMICONDUCTOR PRESSURE SENSOR

摘要

joining a first substrate including a thermal oxide film(8) fromed on an n- silicon substrate(1) and a second sustrate including a p- epitaxy layer(7) formed on a p++ silicon substrate(10) so as to bring the thermal oxide film(8) and the epitaxy layer(7) together; joining a third substrate formed by etching the p++ silicon substrate(10) and a fourth sustrate including a piezoresistor(2) and a dielectrics separating oxide film(9) formed on a silicon substrate(1a) so as to bring the epitaxy layer(7) and the dielectrics separating oxide film(9) together; etching the silicon substrate(1a) using a first silicon film(13) as a mask; forming an electrode(4) on the piezoresistor, and forming a passivation oxide film(14) and a second silicon film(13a) on the dielectrics separating oxide film(9) in turn; forming a diaphragm pattern of the silicon films(13)(13a); and forming a thin silicon diaphragm(3) by etching the n- silicon substrate(1). The method can improve an output response chracteristic to temperature, product the homogeneous diaphragm, and control the thickness of the diaphragm.