| 摘要 |
forming thermal oxide films on both surfaces of a first conductive silicon wafer(31); forming silicon nitride films(34)(35) and silicon oxide films(36) on the thermal oxide films(32)(33), and removing the lower silicon oxide film; forming a heater(37) and a temperature sensor(38) by depositing an alloy for heater and temperature sensor, and patterning it; forming a window for etching by selectively removing the lower thermal oxide film(33) and silicon nitride film(35); depositing a protective film(39) and a sacrificial film(40) over the surface in turn, and patterning; depositing an insulative film(44) over the surface so as to form a contact hole, and depositing a second conductive material(45) thereon; depositing an insulative film(46) over the surface, and forming a room temperature sensor(47) on one side of the insulative film(46); forming an air cavity(49) by depositing a protective film(48), and removing the sacrificial layer(40) to form a hole at center of a thermopile; and depositing a radiative thermal absorber on the protective film(48). All processes are performed in one wafer. The sensor is applicable to an air conditioner and heating facilities.
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