MANUFACTURING METHOD OF SUPER CONDUCTING FIELD EFFECTING DEVICE USING MO-C SUPER THIN FILM

摘要

depositing a Mo-C film(20) on an insulation substrate(10) by sputtering Mo at the room temperature under the mixture gas atmosphere of argon, acetylene and methane gases; forming an insulation film(30) on the MO-C film(20) using the defined resist pattern; and forming gate source and electrodes(40G, 40D, 40S) by lift-off process. The obtained transistor is a swiching device using a superconductor. The method reduces noise and electric power consumption.