| 摘要 |
forming a silicon oxide film(2,2') on a silicon substrate; forming a photoresist on the defined portion of the silicon oxide film(2); etching the silicon oxide film(2) using the photoresist as a mask; forming an n type silicon layer(4) in the sustrate(1); forming a porous silicon layer(5) of 1-6 micro meter depth in the substrate(1) by first step anodic reaction; and oxidizing the porous silicon layer(5) by putting the substrate(1) in boiling water and etching it; forming a porous silicon layer(5) in the substrate(1) by second step anodic reaction; oxidizing the porous silicon layer(5) by conventional oxidation process. The two step anodic reacton raises the porosity of the porous silicon layer, removes a cups, and reduce a stress of side direction.
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