SEMICONDUCTOR OPTICAL SWITCH APPARATUS

摘要

The device consists of a p-type optical waveguide layer which is formed on a substrate, a cladding layer and a cap layer which are formed sequentially on the optical waveguide layer, the first electrode and a p-type electrode which are formed on the bottom of the substrate and on the cap layer respectively, the second electrode which are formed on the cap layer, and the third electrode which are similar to the first electrode formed on the part of the second electrode.