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发明名称
Verfahren zur Herstellung eines Feldeffekttransistors mit einer LDD-Struktur.
摘要
申请公布号
DE69108938(T2)
申请公布日期
1995.08.24
申请号
DE1991608938T
申请日期
1991.01.24
申请人
NEC CORP., TOKIO/TOKYO, JP
发明人
ITOH, HIROSHI, C/O NEC CORPORATION, MINATO-KU, TOKYO, JP
分类号
H01L21/265;H01L21/336;H01L29/78;(IPC1-7):H01L29/772
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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