Semiconductor device with improved barrier metal layer

摘要

The conductive layer (15) comprises a layer from an electrode layer and a wiring layer, and an amorphous alloy layer (14). The latter is formed on the conductive layer underside and consists of a matrix phase and microcrystal grains. The matrix phase contains an amorphous alloy as main component, and the microcrystal grains are dispersed in it without continuous arrangement in the thickness direction of the amorphous alloy layer. Pref. the latter comprised nitrogen and refractory metal from the group of Ti,Zr,Hf,V,Nb,Ta,Cr,W and Mo, and a semiconductor of the Group IV group material, a binary semiconductor compound and/or ternary semiconductor compound.