Semiconductor device with bipolar transistors separated by insulating layer

摘要

Epitaxial n-type layers (4,4a) are formed on the main surface of a p-type semiconductor substrate (1). A field oxide film (6) is selectively formed on the epitaxial layers. An n-type diversion region (19) is formed in the epitaxial layers directly under the field oxide film. A base region (7) and a collector region (8), between the field oxide films, are formed respectively on the surface of the epitaxial layer. The result is a semiconductor component with a circuit with integrated injection logic (IIL) able to suppress the parasite bipolar operation between the base regions.