Mfg. ohmic contacts on n-doped compound semiconductor layer

摘要

The contact forming process is for a III-V compound semiconductor. First a metal contact layer is deposited onto the n-doped semiconductor layer. The metal layer is coated with an Au layer, and finally the metal structure is heat treated for tempering. The metal coated layer consists of an AuGeNi alloy, with the Ge and Ni proportion not exceeding 1% wt. Pref. the layered structure is heat treated at 360 to 390 deg.C for 110 to 180 minutes. With the temp. raised to 430 to 480 deg.C the treatment period may be 5 to 20 seconds. The Ni proportion may be 0.5% wt., and that of Ge 0.4% wt.