| 摘要 |
<p>A method of growing a single crystal for producing a compound semiconductor single crystal having a high quality and a large diameter in a high yield. An easily volatile element (2) is put into a reservoir portion (1A) of a quartz ampule (1) and a crucible (4) made of pBN, into which a compound semiconductor starting material (3A) is charged, is vacuum-sealed into the quartz ampule (1). While vapor pressure control is being made, cooling is gradually made by conducting temperature distribution control so that a first temperature gradient (α°C/cm) in a vertical direction at that portion in the proximity of the outer wall of the quartz ampule (1) corresponding to a molten solution (3B) of the starting material is smaller than a second temperature gradient (β°C/cm) in the vertical direction at a portion above the upper end of the crucible (4). Here, α is 51/D2 to 102/D2 and preferably, 58/D2 to 83/D2°C/cm (D (cm): diameter of single crystal), and β is 1.06X to 1.72X and preferably, 1.19X to 1.46X°C/cm (X = X(Rς/μnL) where cooling rate of furnace internal temperature is R°C/hr, and heat transfer rate, specific gravity, molten latent heat and formula weight of crystal are μkcal/cm.hr.K, ςg/cm3, L.kcal/mol and ng/mol, respectively.</p> |
