A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of: (1) providing a substrate having a surface of smaller nucleation density; (2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated; (3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and (4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point. l
