发明名称 |
Semiconductor device improved in resistance to breaking due to cosmic rays. |
摘要 |
<p>The specific resistance rho of a wafer constituting a single pn junction of a pnpn junction of a GTO thyristor ranges from one-seventeenth the rated voltage to one-twelfth the rated voltage. The thickness (W3) of the wafer is set substantially equal to the width of a depletion layer formed at the pn junction such that punch-through occurs close to the rated voltage. Consequently, the resistance to breaking due to cosmic rays can be improved, the probability of occurrence of defects can be reduced to such an extent as to cause no problems, and the thickness of an n<->-type base layer can be made smaller than that of a prior art one. <IMAGE></p> |
申请公布号 |
EP0668617(A2) |
申请公布日期 |
1995.08.23 |
申请号 |
EP19950102424 |
申请日期 |
1995.02.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIWARA, TAKASHI C/O INT. PROP. DIV., KK. TOSHIBA;MATSUDA, HIDEO, C/O INT. PROP. DIV., KK.TOSHIBA;HIYOSHI, MICHIAKI, C/O INT.PROP.DIV., KK. TOSHIBA |
分类号 |
H01L29/744;H01L29/06;H01L29/74;H01L29/745;H01L29/861;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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