| 摘要 |
<p>PURPOSE:To stabilize an element characteristic, and improve reliability by lengthening the service life or the like by forming an (n<+>) layer coming into contact with a vacuum and a (p<+>) layer under it, and impressing inverse bias. CONSTITUTION:A (p<+>) layer 5 is formed on a (p) type Si board 6 by diffusion, and next, an (n<+>) layer 4 is formed by ion implantation or the like. In this stage, an electrode 7 is attached over the whole wafer reverse surface of the board 6, and a fine mesh-like electrode 3 is installed on a layer 4 surface. An element cut out of a wafer is put in a vacuum, and inverse bias is impressed through high resistance, a material by applying a phosphor film 10 onto glass 8 having a transparent conductive film 9 is arranged as an anode, and prescribed electric potential is impressed on the conductive film 9. In this case, when a valence electron in a (p<+>) area is implanted in an (n<+>) area by a tunnel effect by impressing inverse bias voltage on (p<+>)-(n<+>) junction, an energy loss in an (n<+>) semiconductor of a hot electron is reduced, and energy to emit an electron in an effective vacuum is reduced, and it can be easily emitted in a vacuum from a semiconductor surface.</p> |
