| 摘要 |
<p>PURPOSE: To prevent generation of a leakage current and improve the stability of a device operation not only by an ordinary high temperature process but also by a low temperature process. CONSTITUTION: A thin film transistor has an insulating substrate 40, a polysilicon film 42, a gate electrode 45, metal oxide films 46 and a barrier layer 49. The polysilicon film has a pair of source/drain regions 42a, a channel region 42b formed between the source/drain regions and LDD regions 42c between the source/drain regions and the channel region. A gate insulating film is formed on the polysilicon film. The gate electrode is formed on the insulating film above the channel region and made of metal. The metal oxide films are formed adjacent to the side walls of the gate electrode above the LDD regions. The barrier layer is formed on the gate electrode.</p> |
