发明名称 Semiconductor memory device having means for monitoring bias voltage
摘要 A semiconductor memory device having a power supply terminal, a circuit ground, a plurality of memory cells for storing data, bias voltage generating means connected between the power supply terminal and circuit ground, for applying a bias voltage to the memory cells, and monitor means for monitoring the bias voltage.
申请公布号 US5444659(A) 申请公布日期 1995.08.22
申请号 US19940288221 申请日期 1994.08.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOKOKURA, SEIICHIRO
分类号 G11C17/00;G11C5/14;G11C16/30;G11C29/00;G11C29/12;(IPC1-7):G11C11/40;G11C7/00 主分类号 G11C17/00
代理机构 代理人
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