发明名称 |
Method of fabricating a short-channel DMOS transistor with removable sidewall spacers |
摘要 |
The present invention relates to a method of forming a double diffused metal-oxide-semiconductor (DMOS) transistor which enables the formation of short channels. This method uses silicon nitride sidewall spacers so that the sidewall spacers can be removed without etching the field oxide, therefore the length of the channel can be minimized to reduce the channel resistance.
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申请公布号 |
US5444002(A) |
申请公布日期 |
1995.08.22 |
申请号 |
US19930172616 |
申请日期 |
1993.12.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YANG, SHENG-HSING |
分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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