| 摘要 |
PCT No. PCT/JP92/01001 Sec. 371 Date Apr. 28, 1994 Sec. 102(e) Date Apr. 28, 1994 PCT Filed Aug. 5, 1992 PCT Pub. No. WO93/03590 PCT Pub. Date Feb. 18, 1993.It is an object to provide a plasma processing apparatus which is capable of precisely controlling the energy and density of ions injected into a substrate body, and which is capable of easily conducting the control of process parameters. The present invention is provided with at least: a measurement mechanism for RF power wave forms and RF power; a calculating mechanism for calculating the energy and density of ions injected into a substrate body based on measured values; a memory mechanism for storing process parameters determined in conjunction with the state of the plasma; a display mechanism for displaying memory contents based on output from the memory mechanism; a setting mechanism for setting ion energy and density to predetermined values; an input mechanism for inputting ion energy values and ion density values into the setting mechanism; and a control mechanism for controlling ion energy and density within the apparatus to preset values in accordance with values set in the setting mechanism.
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