| 发明名称 |
Method for forming a stacked capacitor in a semiconductor device |
| 摘要 |
This invention relates to a method for forming a stacked capacitor in a semiconductor device. This invention can increase the capacitance of a capacitor by planarizing a polysilicon layer for a charge storage electrode and forming a recess on the planarized polysilicon layer.
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| 申请公布号 |
US5444010(A) |
申请公布日期 |
1995.08.22 |
| 申请号 |
US19940242398 |
申请日期 |
1994.05.13 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES, LTD. |
发明人 |
PARK, SANG HOON;CHOI, HO YOUNG |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
| 代理机构 |
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