发明名称 |
Method for fabricating semiconductor device |
摘要 |
Disclosed is a method of fabricating an SOI substrate, comprising the steps of forming a first insulating layer on a single crystal silicon substrate; patterning the first insulating layer to form an opening; growing a single crystal silicon in the opening to form active and inactive regions; polishing the active region 31 as the first insulating layer as a polishing stopper to form a planarized surface; depositing a second insulating layer on the planarized surface; bonding a bonding substrate to the second insulating layer; and polishing the silicon substrate using the first insulating layer as a stopper up to a surface of the active region. By the method, a stray capacitance occurring between an SOI substrate and a metal wiring portion formed thereon can be significantly reduced owing to a relatively thick insulating layer therebetween, and a parasitic capacitance can be eliminated owing to an insulating layer interposed between a bonding substrate and an active region to be used as a buried collector.
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申请公布号 |
US5444014(A) |
申请公布日期 |
1995.08.22 |
申请号 |
US19940357021 |
申请日期 |
1994.12.16 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA TELECOMMUNICATION AUTHORITY |
发明人 |
RYUM, BYUNG-RYUL;HAN, TAE-HYEON;LEE, SOO-MIN;CHO, DEOK-HO;LEE, SEONG-HEARN;KANG, JIN-YOUNG |
分类号 |
H01L21/331;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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