发明名称 Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
摘要 A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
申请公布号 US5444207(A) 申请公布日期 1995.08.22
申请号 US19930037169 申请日期 1993.03.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SEKINE, MAKOTO;HORIOKA, KEIJI;OKANO, HARUO;OKUMURA, KATSUYA;HASEGAWA, ISAHIRO;NARITA, MASAKI
分类号 B23K10/00;H01J37/32;(IPC1-7):B23K10/00;H05H1/18;H01L21/00 主分类号 B23K10/00
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