发明名称 |
Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field |
摘要 |
A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
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申请公布号 |
US5444207(A) |
申请公布日期 |
1995.08.22 |
申请号 |
US19930037169 |
申请日期 |
1993.03.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SEKINE, MAKOTO;HORIOKA, KEIJI;OKANO, HARUO;OKUMURA, KATSUYA;HASEGAWA, ISAHIRO;NARITA, MASAKI |
分类号 |
B23K10/00;H01J37/32;(IPC1-7):B23K10/00;H05H1/18;H01L21/00 |
主分类号 |
B23K10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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