MANUFACTURE OF SOLAR CELL

摘要

PURPOSE:To prevent the exposure of a first layer, which is caused by surface defect, such as pinholes, which is generated by a heat treatment of a second layer, from being generated by a method wherein a third layer having the same conductivity type as that of the second layer is formed on the second layer consisting of another conductivity type II-Vl compound semiconductor layer, in which the surface defect, such as the pinholes, is generated, by a chemical deposition method. CONSTITUTION:An ITO film 3 is formed on a glass substrate 1 and an N-type CdS film 5 is formed on this film 3 as a first layer by a vacuum deposition method. Then, a P-type CdTe film is formed as a second layer by a vacuum deposition method, a heat treatment of the CdTe film is performed in the air and a CdTe polycrystalline film 7 is formed. Pinholes are generated in the film 7 by the heat treatment. Then, a CdTe film 9, which is a compound semiconductor film consisting of the same composition as that of the film 7, is deposited as a third layer by a chemical deposition method. Lastly, a Cu/Au electrode 11 and an In electrode 13 are formed. Thereby, as the exposure of the film 5, which is caused by the pinholes, can be prevented from being generated, a reduction in the electrical characteristics of a solar cell can be prevented from being generated.